PART |
Description |
Maker |
IHW40N60R |
Reverse conducting IGBT
|
Infineon Technologies A...
|
IHW30N90R08 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHW15N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
IKW40N65WR5-16 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
5SHX19L6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
IXRA15N120 |
IGBT with Reverse Blocking capability
|
IXYS
|
TISPPBL3 TISPPBL3D TISPPBL3D-S TISPPBL3DR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) 双远期导电的P -门晶闸管爱立信微电子用户线接口电路电路(SLIC
|
Bourns Inc. Bourns, Inc.
|
TISP5190H3BJ TISP5110H3BJ |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solut...
|